Nanostructures such as silicon nanowires are being studied for use in creating novel field effect transistors (FET). The ability to correlate surface composition with growth mechanisms and device performance is essential to making devices such as FETs.
Fig. 1: Auger spectrum showing the presence of a P dopant on the surface of the silicon nanowire
Fig. 2: Auger sputter depth profile of P on the surface of the silicon nanowire.
Sample courtesy of U. Givan, Dept. of Physical Electronics, School of Electrical Engineering, Tel-Aviv University, Israel For additional information see Mater. Res. Soc. Symp. Proc. Vol. 1 © 2011 Materials Research Society